The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 11, 2015

Filed:

Feb. 28, 2011
Applicants:

Hans-peter Felsl, Munich, DE;

Thomas Raker, Unterfoehring, DE;

Hans-joachim Schulze, Taufkirchen, DE;

Franz-josef Niedernostheide, Muenster, DE;

Inventors:

Hans-Peter Felsl, Munich, DE;

Thomas Raker, Unterfoehring, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Franz-Josef Niedernostheide, Muenster, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/744 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/861 (2006.01); H01L 29/87 (2006.01);
U.S. Cl.
CPC ...
H01L 29/744 (2013.01); H01L 29/0607 (2013.01); H01L 29/1016 (2013.01); H01L 29/8611 (2013.01); H01L 29/87 (2013.01);
Abstract

Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.


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