Infineon Technologies Ag

Infineon Technologies Austria Ag

Hans-Peter Felsl

Hans-Joachim Schulze

Franz-Josef Niedernostheide

Franz Hirler

Anton Mauder

Frank Dieter Pfirsch

Johannes Georg Laven

Christian Philipp Sandow

Thomas Raker

Manfred Pfaffenlehner

An IGBT includes at least one first type transistor cell, including a base region, first and second emitter regions, and a body region arranged between the first emitter region and base region. The base region is arranged between the body region and second emitter region. A gate electrode adjacent the body region is dielectrically insulated from the body region by a gate dielectric. A base electrode adjacent the base region is dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A ratio between the doping concentration of the first base region section and the doping concentration of the second base region section is at least 10. The base electrode dielectric is thicker than the gate dielectric.

IGBT having at least one first type transistor cell and reduced feedback capacitance

An IGBT module is provided. The IGBT module has at least a first individual IGBT with a first softness during switching-off the IGBT module, and at least a second individual IGBT connected in parallel to the at least one first IGBT. The at least one second individual IGBT has a second softness during switching-off the IGBT module which is different than the first softness. Further a circuit and an electronic power device having two individual IGBTs, which are connected in parallel, are provided.

IGBT module and a circuit

An IGBT includes at least one first type transistor cell, including a base region, a first emitter region, a body region, and a second emitter region. The body region is arranged between the first emitter region and the base region. The base region is arranged between the body region and the second emitter region. The IGBT further includes a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a base electrode adjacent the base region and dielectrically insulated from the base region by a base electrode dielectric. The base region has a first base region section adjoining the base electrode dielectric and a second base region section arranged between the second emitter region and the first base region section. A doping concentration of the first base region section is higher than a doping concentration of the second base region section.

IGBT with reduced feedback capacitance

Disclosed is a semiconductor component that includes a semiconductor body, a first emitter region of a first conductivity type in the semiconductor body, a second emitter region of a second conductivity type spaced apart from the first emitter region in a vertical direction of the semiconductor body, a base region of one conductivity type arranged between the first emitter region and the second emitter region, and at least two higher doped regions of the same conductivity type as the base region and arranged in the base region. The at least two higher doped regions are spaced apart from one another in a lateral direction of the semiconductor body and separated from one another only by sections of the base region.

Semiconductor component with improved dynamic behavior

A semiconductor device includes a semiconductor diode. The semiconductor diode includes a drift region and a first semiconductor region of a first conductivity type formed in or on the drift region. The first semiconductor region is electrically coupled to a first terminal via a first surface of a semiconductor body. The semiconductor diode includes a channel region of a second conductivity type electrically coupled to the first terminal, wherein a bottom of the channel region adjoins the first semiconductor region. A first side of the channel region adjoins the first semiconductor region.

Semiconductor device and method for manufacturing the semiconductor device

A semiconductor device includes a trench extending into a drift zone of a semiconductor body from a first surface. The semiconductor device further includes a gate electrode in the trench and a body region adjoining a sidewall of the trench. The semiconductor device further includes a dielectric structure in the trench. The dielectric structure includes a high-k dielectric in a lower part of the trench. The high-k dielectric includes a dielectric constant higher than that of SiO. An extension of the high-k dielectric in a vertical direction perpendicular to the first surface is limited between a bottom side of the trench and a level where a bottom side of the body region adjoins the sidewall of the trench.

Semiconductor device including a dielectric structure in a trench

An IGBT includes a first region, a second region located within the first region, a first contact coupled to the first region, a first layer arranged below the first region, a gate overlying at least a portion of the first region between the second region and the first layer and a second layer formed under the first layer. One or more stacked zones are formed within the second layer. Each one or more stacked zones includes a first zone and a second zone that overlies the first zone. Each first zone is inversely doped with respect to the second layer and each second zone is inversely doped with respect to the first zone. The IGBT further includes a third layer formed under the second layer and a second contact coupled to the third layer.

IGBT having one or more stacked zones formed within a second layer of the IGBT

A semiconductor component includes a semiconductor body and a second semiconductor zone of a first conductivity type that serves as a rear side emitter. The second semiconductor zone is preceded by a plurality of third semiconductor zones of a second conductivity type that is opposite to the first conductivity type. The third semiconductor zones are spaced apart from one another in a lateral direction. In addition, provided within the semiconductor body is a field stop zone spaced apart from the second semiconductor zone, thereby reducing an electric field in the direction toward the second semiconductor zone.

Soft switching semiconductor component with high robustness and low switching losses

A semiconductor device includes a first layer having a first conductivity type, a second layer having a second conductivity type, a third layer having the second conductivity type, one or more first zones having the first conductivity type and located within the second layer, wherein each one of the one or more first zones is adjacent to the third layer, and one or more second zones having the second conductivity type and located within the second layer, wherein each one of the one or more second zones is adjacent to one or more of the one or more first zones.

Diode having one or more zones of a first conductivity type and one or more zones of a second conductivity type each located within a layer of the second conductivity type

Growing community of inventors

Munich, Germany

Hans-Peter Felsl