Emmendingen, Germany

Hans-Jurgen Gahle

This inventor holds 4 USPTO granted patents. Top assignees: Deutsche Itt Industries Gmbh, Itt Industries, Inc., Micronas Gmbh. Active years: 1984-2008.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans-Jurgen Gahle. Retrieved from https://idiyas.com/inventor/hans-jurgen-gahle

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 75.0

Average Co-Inventor Count = 1.8

ph-index = 3

Forward Citations = 50(Granted Patents)


Company Filing History:


Years Active: 1984-2008

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4 patents (USPTO):Explore Patents

Title: The Innovations of Hans-Jurgen Gahle

Introduction

Hans-Jurgen Gahle is a notable inventor based in Emmendingen, Germany. He has made significant contributions to the field of technology, particularly in the development of sensors and field effect transistors. With a total of 4 patents to his name, Gahle's work has had a considerable impact on various applications in the industry.

Latest Patents

One of Gahle's latest patents is a field effect transistor designed for measuring biocomponents. This invention relates to a device that can measure living cells or similar biocomponents. It comprises a field effect transistor equipped with a source, a drain, and a channel area placed on a substrate. The channel area connects the source and drain and features a gate electrode mounted on it. Notably, the gate electrode has at least two laterally disposed parallel electrode areas that are perpendicular to the direction in which the channel area connects the source to the drain, ensuring they are distant and electrically insulated from each other.

Another significant patent is a process for manufacturing a sensor with a metal electrode in an MOS structure. This invention outlines a method for creating a sensor where a sensing region with a structure for the metal electrode is formed during the MOS process. The structure is made of a material with predetermined adhesion properties for metals. The sensing region is uncovered by etching the passivating layer, followed by a metallization of the surface of the MOS structure, ensuring that the metal layer adheres only to the structure for the metal electrode.

Career Highlights

Throughout his career, Hans-Jurgen Gahle has worked with several prominent companies, including Deutsche Itt Industries GmbH and Micronas Intermetall GmbH. His experience in these organizations has allowed him to refine his skills and contribute to various innovative projects.

Collaborations

Gahle has collaborated with notable colleagues such as Arnold Uhlenhoff and Guenter Igel. These partnerships have further enhanced his work and led to advancements in the technologies he has developed.

Conclusion

Hans-Jurgen Gahle's contributions to the field of technology through his patents and collaborations highlight his innovative spirit and dedication to advancing sensor technology. His work continues to influence the industry and inspire future inventions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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