The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 26, 1984
Filed:
Mar. 31, 1982
Hans-Jurgen Gahle, Emmendingen, DE;
ITT Industries, Inc., New York, NY (US);
Abstract
A method is disclosed for fabricating a monolithic integrated planar transistor whose emitter region (1) is diffused into the base region (3) on one surface side of a semiconductor wafer (2), which base region is diffused into the collector region (4). To achieve particularly small transistor structures with high cutoff frequencies, after the diffusion of the collector region (4), the impurities of the base region (3) and those of the emitter region (1) are introduced into the surface of the collector region (4) by masked ion implantation, and the implanted ions are then activated in a single tempering process, during which the base region (3) and the emitter region (1) are formed below a protective insulating layer (5) which remains on the semiconductor surface. In the protective insulating layer, windows are formed for depositing the contacts (6, 7, 8) of the collector region (4), the base region (3), and the emitter region (1).