Itt Industries, Inc.

Micronas Gmbh

Deutsche Itt Industries Gmbh

Micronas Intermetall Gmbh

Hans-Jurgen Gahle

Mirko Lehmann

Ingo Freund

Guenter Igel

Arnold Uhlenhoff

Werner Baumann

The invention relates to a device for measuring living cells or similar biocomponents comprising a field effect transistor which is provided with a source, a drain and a channel area placed on a substrate. Said channel area connects said source and drain and is provided with a gate-electrode mounted thereon. The gate electrode has at least two laterally disposed parallel electrode areas which are perpendicular to a direction in which the channel area connects the source to the drain in such a way that they are distant and electrically insulated from each other.

Field effect transistor for measuring biocomponents

The invention relates to a process for manufacturing a sensor with a metal electrode in an MOS structure. During the MOS process, a sensing region with a structure for the metal electrode is formed, this structure being made of a material having predetermined adhesion properties for metals, the sensing region being uncovered by etching the passivating layer, and a metallization of the surface of the MOS structure being carried out in which the metal layer adheres only to the structure for the metal electrode.

Process for manufacturing a sensor with a metal electrode in a metal

A CMOS/NMOS integrated circuit realizes individual logic circuits with a combination of CMOS and enhancement-mode NMOS devices. The parameters of the CMOS and NMOS devices are selected such that the supply voltage dependency of the CMOS devices is offset by the supply voltage dependency of the NMOS devices. Thus, the propagation delays in the CMOS and NMOS devices, individually a function of supply voltage, remain constant for variations in the supply voltage. The logic circuits include analog-to-digital converters, adders, multipliers, flip flops and ring oscillators. The ring oscillator includes two blocks of inverters. The first block comprises CMOS inverters connected in series; the second block comprises enhancement-mode NMOS inverters connected in series. The output of the first block is connected to the input of the second block, and the output of the second block is connected to the input of the first block, thus forming a 'ring' of inverters. Because the supply voltage dependency of the CMOS inverters is offset by the supply voltage dependency of the NMOS inverters, the oscillation frequency of the ring oscillator is independent of the supply voltage.

CMOS/NMOS integrated circuit with supply voltage delay variation

A method is disclosed for fabricating a monolithic integrated planar transistor whose emitter region (1) is diffused into the base region (3) on one surface side of a semiconductor wafer (2), which base region is diffused into the collector region (4). To achieve particularly small transistor structures with high cutoff frequencies, after the diffusion of the collector region (4), the impurities of the base region (3) and those of the emitter region (1) are introduced into the surface of the collector region (4) by masked ion implantation, and the implanted ions are then activated in a single tempering process, during which the base region (3) and the emitter region (1) are formed below a protective insulating layer (5) which remains on the semiconductor surface. In the protective insulating layer, windows are formed for depositing the contacts (6, 7, 8) of the collector region (4), the base region (3), and the emitter region (1).

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Emmendingen, Germany

Hans-Jurgen Gahle