Munich, Germany

Hannes Luyken

This inventor holds 2 USPTO granted patents. Top assignees: Infineon Technologies Ag, Qimonda Ag. Active years: 2006-2010.


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 11(Granted Patents)


Company Filing History:


Years Active: 2006-2010

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2 patents (USPTO):Explore Patents

Title: Hannes Luyken: Innovator in Integrated Circuit Technology

Introduction

Hannes Luyken is a notable inventor based in Munich, Germany. He has made significant contributions to the field of integrated circuit technology, holding 2 patents that showcase his innovative approach to semiconductor manufacturing.

Latest Patents

Luyken's latest patents include a method for manufacturing a transistor, which involves forming source/drain regions, a channel, and a gate electrode. This method emphasizes the importance of defining a gate groove in the substrate and creating pockets in isolation trenches to enhance transistor performance. Another significant patent focuses on the fabrication of a memory cell, which includes a storage layer designed for charge carrier trapping and a gate electrode insulated from the semiconductor material. This method outlines the steps for creating trenches, forming source-drain regions, and ensuring proper electrical connections.

Career Highlights

Throughout his career, Hannes Luyken has worked with prominent companies such as Qimonda AG and Infineon Technologies AG. His experience in these organizations has allowed him to refine his skills and contribute to advancements in semiconductor technology.

Collaborations

Luyken has collaborated with notable colleagues, including Peng-Fei Wang and Joachim Nuetzel. These partnerships have further enriched his work and led to innovative solutions in the field.

Conclusion

Hannes Luyken's contributions to integrated circuit technology and his innovative patents reflect his expertise and dedication to advancing the semiconductor industry. His work continues to influence the development of modern electronic devices.

Profile summary based on public USPTO records.
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