The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2010
Filed:
Sep. 09, 2005
Peng-fei Wang, Dresden, DE;
Joachim Nuetzel, Dresden, DE;
Rolf Weis, Dresden, DE;
Till Schloesser, Dresden, DE;
Marc Strasser, Munich, DE;
Hannes Luyken, Munich, DE;
Peng-Fei Wang, Dresden, DE;
Joachim Nuetzel, Dresden, DE;
Rolf Weis, Dresden, DE;
Till Schloesser, Dresden, DE;
Marc Strasser, Munich, DE;
Hannes Luyken, Munich, DE;
Qimonda AG, Munich, DE;
Abstract
A method of manufacturing a transistor is disclosed. The method includes forming a first and a second source/drain regions, a channel connecting the first and the second source/drain regions and a gate electrode for controlling the conductivity of the channel. The gate electrode is formed by defining a gate groove in the substrate, and defining a pocket in each of the isolation trenches at a position adjacent to the groove so that the two pockets will be connected with the groove and the groove is disposed between the two pockets. A gate insulating material is provided at an interface between the active area and the groove and at an interface between the active area and the pockets. A gate electrode material is deposited so as to fill the groove and the two pockets.