Hangle Guo

Title: Hangle Guo: Innovator in Oxide Thin Film Transistors

Introduction

Hangle Guo is a prominent inventor based in Beijing, China. He is known for his significant contributions to the field of electronics, particularly in the development of oxide thin film transistors. His innovative work has led to advancements in display technology, making him a notable figure in the industry.

Latest Patents

Hangle Guo holds a patent for an oxide thin film transistor, which includes a gate, a gate insulator, a channel layer, a protective layer, and source and drain electrode layers. The design features a protective layer that is strategically placed between the channel layer and the source and drain electrode layers. This configuration enhances the performance and reliability of the transistor, which is crucial for modern display apparatuses. He has 1 patent to his name.

Career Highlights

Throughout his career, Hangle Guo has worked with notable companies in the optoelectronics sector. He has been associated with Fuzhou Boe Optoelectronics Technology Co., Ltd. and Boe Technology Group Co., Ltd. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking technologies in the field.

Collaborations

Hangle Guo has collaborated with esteemed colleagues such as Bin Lin and Zengrong Li. These partnerships have fostered an environment of innovation and creativity, leading to advancements in their respective projects.

Conclusion

Hangle Guo's contributions to the field of oxide thin film transistors exemplify his dedication to innovation and technology. His work continues to influence the development of advanced display systems, solidifying his legacy as a key inventor in the electronics industry.