The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 25, 2025
Filed:
Dec. 01, 2020
Fuzhou Boe Optoelectronics Technology Co., Ltd., Fujian, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Bin Lin, Beijing, CN;
Zengrong Li, Beijing, CN;
Hangle Guo, Beijing, CN;
Zhenyou Zou, Beijing, CN;
Liangliang Li, Beijing, CN;
Fadian Le, Beijing, CN;
FUZHOU BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Fujian, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
Provided is an oxide thin film transistor, including a gate, a gate insulator, a channel layer, a protective layer, and a source electrode and drain electrode layer that are disposed on a base substrate, wherein the source electrode and drain electrode layer includes a source electrode and a drain electrode that are spaced; and the protective layer is disposed between the channel layer and the source electrode and drain electrode layer, and is in contact with both the source electrode and drain electrode layer and the channel layer; an orthographic projection of the protective layer on the base substrate covers an orthographic projection of the channel layer on the base substrate; and the protective layer includes a first portion, a second portion, and a third portion that are in different areas of the protective layer.