Boe Technology Group Co., Ltd.

Fuzhou Boe Optoelectronics Technology Co., Ltd.

Hangle Guo

Liangliang Li

Bin Lin

Zhenyou Zou

Fadian Le

Zengrong Li

Provided is an oxide thin film transistor, including a gate, a gate insulator, a channel layer, a protective layer, and a source electrode and drain electrode layer that are disposed on a base substrate, wherein the source electrode and drain electrode layer includes a source electrode and a drain electrode that are spaced; and the protective layer is disposed between the channel layer and the source electrode and drain electrode layer, and is in contact with both the source electrode and drain electrode layer and the channel layer; an orthographic projection of the protective layer on the base substrate covers an orthographic projection of the channel layer on the base substrate; and the protective layer includes a first portion, a second portion, and a third portion that are in different areas of the protective layer.

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Beijing, China

Hangle Guo