Han Yang

Title: Han Yang - Innovator in 3D Memory Technology

Introduction

Han Yang is a prominent inventor based in Hubei, China. He has made significant contributions to the field of memory technology, particularly in the development of three-dimensional (3D) memory devices. His innovative approach has led to advancements that enhance the performance and efficiency of memory structures.

Latest Patents

Han Yang holds a patent for a "Method for forming contact structures in three-dimensional memory devices." This patent describes embodiments of 3D memory structures and methods for forming them. The fabrication method includes forming multiple openings in staircase regions, periphery device regions, and substrate contact regions of a 3D NAND memory device. The openings can be created through a photolithography process followed by multiple etching processes. The patent details how these openings can include complete openings that expose the underlying layer and mid-way openings where a remaining portion of the photoresist still exists. This innovative method allows for the effective formation of contact structures for various components within the memory device.

Career Highlights

Han Yang is currently employed at Yangtze Memory Technologies Co., Ltd. His work at this leading technology company has positioned him at the forefront of memory device innovation. With a focus on enhancing 3D NAND technology, he has contributed to the development of more efficient and reliable memory solutions.

Collaborations

Han Yang has collaborated with notable colleagues in his field, including Fanqing Zeng and Fushan Zhang. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Han Yang's contributions to the field of 3D memory technology exemplify the impact of innovative thinking in advancing modern technology. His patent and work at Yangtze Memory Technologies Co., Ltd. highlight his role as a key player in the evolution of memory devices.