Han Woong Yoo

Title: Han Woong Yoo and Memory-Device Innovation.

Introduction

Han Woong Yoo is an inventor based in Seoul, South Korea, whose patent work focuses on non-volatile and multi-bit memory technologies. His portfolio includes 9 patents, including inventions addressing memory-cell access and programming methods. He is associated with Samsung Electronics Co., Ltd.

Latest Patents

“Access Method of Non-Volatile Memory Device” describes detecting a threshold-voltage variation in a first memory cell that may physically affect a second cell. The method assigns the second cell to a sub-distribution based on the variation’s distance, with the sub-distributions corresponding to the second cell’s target distribution.

“Program Method of Multi-Bit Memory Device and Data Storage System Using the Same” presents a programming approach for memory cells arranged in rows and columns. It programs cells in different groups using verify-voltage levels drawn from separate ranges. The lowest level in the second range is higher than the highest level in the first range, and the voltage spacing between adjacent levels is configured differently across the specified ranges.

Career Highlights

Yoo’s listed work reflects an emphasis on controlling memory-cell behavior through voltage detection, distribution assignment, and programming levels. These techniques address aspects of reliable operation in non-volatile and multi-bit memory devices.

Collaborations

Yoo’s listed coworkers include Jaehong Kim and Junjin Kong. His company affiliation is Samsung Electronics Co., Ltd.

Conclusion

Han Woong Yoo’s patent portfolio highlights contributions to memory-device access and programming methods, with a focus on managing cell variations and verify-voltage levels.