The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2013
Filed:
Apr. 06, 2011
Hong Rak Son, Anyang-si, KR;
Han Woong Yoo, Seoul, KR;
Jaehong Kim, Seoul, KR;
Jun Jin Kong, Yongin-si, KR;
Hong Rak Son, Anyang-si, KR;
Han Woong Yoo, Seoul, KR;
Jaehong Kim, Seoul, KR;
Jun Jin Kong, Yongin-si, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a program method of a multi-bit memory device with memory cells arranged in rows and columns. The program method includes a programming each memory cell of the first group of memory cells to a state within a first group of states according to a verify voltage level of a first group of verify voltage levels within a first range of levels, and programming each memory cell of the second group of memory cells to a state within a second group of states according to a verify voltage level of a second group of verify voltage levels within a second range of levels. The lowest verify voltage level in the second range of levels is higher than the highest verify voltage level in the first range of levels. A first voltage difference between adjacent verify voltage levels within the first range of levels is different from a second voltage difference between the highest verify voltage level of the second group of verify voltage levels and the lowest verify voltage level of the third group of verify voltage levels.