The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 06, 2013
Filed:
Oct. 19, 2009
Han Woong Yoo, Seoul, KR;
Kyounglae Cho, Yongin-si, KR;
Seung-hwan Song, Suwon-si, KR;
Heeseok Eun, Yongin-si, KR;
Hong Rak Son, Hwaseong-si, KR;
Han Woong Yoo, Seoul, KR;
KyoungLae Cho, Yongin-si, KR;
Seung-Hwan Song, Suwon-si, KR;
Heeseok Eun, Yongin-si, KR;
Hong Rak Son, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.