Han Chuan Fang

Title: Han Chuan Fang: Innovator in Oxide Semiconductor Technology

Introduction

Han Chuan Fang is a notable inventor based in Singapore, SG. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance and reliability of oxide semiconductor devices.

Latest Patents

Among his latest patents is the "Oxide semiconductor device and manufacturing method thereof." This invention includes a substrate, a first patterned oxide semiconductor layer, a source electrode, a drain electrode, and a sidewall spacer. The first patterned oxide semiconductor layer is disposed on the substrate, while the source and drain electrodes are placed on this layer. The sidewall spacer is strategically positioned on the sidewall of the first patterned oxide semiconductor layer. Its purpose is to improve the performance of blocking impurities from entering the semiconductor layer, thereby enhancing the electrical performance and reliability of the oxide semiconductor device.

Career Highlights

Han Chuan Fang is currently employed at United Microelectronics Corporation, where he continues to innovate in the semiconductor industry. His work has been instrumental in advancing the technology surrounding oxide semiconductors.

Collaborations

He has collaborated with notable colleagues such as Jen-Po Huang and Chien-Ming Lai, contributing to various projects that push the boundaries of semiconductor technology.

Conclusion

Han Chuan Fang's contributions to oxide semiconductor technology are noteworthy, and his patents reflect his commitment to innovation in this field. His work continues to influence the development of reliable and efficient semiconductor devices.