The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Jul. 10, 2014
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Ji Gang Pan, Beijing, CN;

Han Chuan Fang, Singapore, SG;

Boon-Tiong Neo, Singapore, SG;

Assignee:

UNITED MIRCOELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 27/108 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10894 (2013.01); H01L 21/76801 (2013.01);
Abstract

A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a memory region and a periphery region; forming a memory cell on the memory region; forming a first polysilicon layer on the periphery region and the memory cell; forming a patterned cap layer on the periphery region; forming a second polysilicon layer on the first polysilicon layer and the patterned cap layer; and performing a chemical mechanical polishing (CMP) process to remove the second polysilicon layer, wherein the chemical mechanical polishing process comprises an abrasive of greater than 13% and a remove rate of less than 30 Angstroms/second.


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