Gyeonggi-do, South Korea

Han-Byung Park

USPTO Granted Patents = 13 

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 318(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2008 - 2011)
  • Seongnam-si, KR (2009 - 2012)

Company Filing History:


Years Active: 2008-2012

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13 patents (USPTO):Explore Patents

Title: The Innovations of Han-Byung Park

Introduction

Han-Byung Park is a prominent inventor based in Gyeonggi-do, South Korea. He has made significant contributions to the field of electronics, holding a total of 13 patents. His work primarily focuses on advanced electronic structures and devices, showcasing his expertise and innovative spirit.

Latest Patents

Among his latest patents, Han-Byung Park has developed an interconnection structure and an electronic device employing the same. This interconnection structure is designed for integrated systems and includes first and second contact plugs on a substrate, with a connection pattern that electrically connects these plugs. Another notable patent is for a full complementary metal-oxide semiconductor (CMOS) static random access memory (SRAM). This design reduces cell size by strategically arranging transistors and word lines, enhancing the efficiency of SRAM technology.

Career Highlights

Han-Byung Park is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of electronic innovation. His work has not only contributed to the advancement of technology but has also positioned him as a key figure in the industry.

Collaborations

Throughout his career, Han-Byung Park has collaborated with talented individuals such as Soon-Moon Jung and Hoon Lim. These partnerships have fostered a creative environment that has led to groundbreaking developments in electronic devices.

Conclusion

Han-Byung Park's contributions to the field of electronics through his innovative patents and collaborations highlight his role as a leading inventor. His work continues to influence the industry and pave the way for future advancements.

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