The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2009

Filed:

Aug. 11, 2006
Applicants:

Han-byung Park, Seongnam-si, KR;

Hoon Lim, Seoul, KR;

Soon-moon Jung, Seongnam-si, KR;

Inventors:

Han-Byung Park, Seongnam-si, KR;

Hoon Lim, Seoul, KR;

Soon-Moon Jung, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
Abstract

Example embodiments relate to a semiconductor device and a method of fabricating the same. The device may include a semiconductor substrate including a peripheral region and a cell array region, wherein the substrate in the cell array region may be recessed lower than the peripheral region, a plurality of cell transistor layers stacked in the cell array region, and a plurality of peripheral circuit transistors formed in the peripheral region. The cell transistor layers may be formed in the cell array region at a lower level than the peripheral region.


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