This inventor holds 2 USPTO granted patents. Top assignee: Sandisk Technologies Inc.. Active years: 2017.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2017
Title: Hajime Kimura: Innovator in Semiconductor Technology
Introduction
Hajime Kimura is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology, holding a total of 2 patents. His work focuses on innovative methods that enhance the performance and efficiency of memory devices.
Latest Patents
Hajime Kimura's latest patents include a "Method of suppressing epitaxial growth in support openings" and a "Method of making a monolithic three-dimensional NAND string using a select gate etch stop layer." The first patent addresses the formation of memory openings and support openings through an alternating stack of insulating layers and spacer material layers over a semiconductor substrate. This method prevents the deposition of semiconductor material in support openings during the formation of epitaxial channel portions in memory openings. The second patent outlines a process for creating a monolithic three-dimensional NAND string, which involves forming a select gate layer and etching a stack of alternating material layers to create openings.
Career Highlights
Hajime Kimura is currently employed at SanDisk Technologies Inc., where he continues to develop cutting-edge technologies in the semiconductor industry. His innovative approaches have positioned him as a key player in advancing memory device technology.
Collaborations
Some of his notable coworkers include Michiaki Sano and Ryousuke Itou, who have collaborated with him on various projects within the company.
Conclusion
Hajime Kimura's contributions to semiconductor technology through his patents and work at SanDisk Technologies Inc. highlight his role as an influential inventor in the field. His innovative methods continue to shape the future of memory devices.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
