The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
May. 29, 2015
Sandisk Technologies, Inc., Plano, TX (US);
Shinsuke Yada, Yokkaichi, JP;
Shigehiro Fujino, Yokkaichi, JP;
Hajime Kimura, Yokkaichi, JP;
Masanori Terahara, Yokkaichi, JP;
Ryoichi Honma, Yokkaichi, JP;
Hiroyuki Ogawa, Yokkaichi, JP;
Ryousuke Itou, Yokkaichi, JP;
SANDISK TECHNOLOGIES LLC, Plano, TX (US);
Abstract
A method of making a monolithic three dimensional NAND string includes forming a select gate layer of a third material over a major surface of a substrate, forming a stack of alternating first material and second material layers over the select gate layer, where the first material, the second material and the third material are different from each other, and etching the stack using a first etch chemistry to form at least one opening in the stack at least to the select gate layer, such that the select gate layer acts as an etch stop layer during the step of etching.