Company Filing History:
Years Active: 2015-2024
Title: Shigehiro Fujino: Innovator in Memory Device Technology
Introduction
Shigehiro Fujino is a prominent inventor based in Yokkaichi, Japan. He has made significant contributions to the field of memory device technology, holding a total of 9 patents. His work focuses on innovative methods and devices that enhance the performance and efficiency of memory systems.
Latest Patents
Fujino's latest patents include a groundbreaking invention titled "Three-dimensional memory device containing self-aligned bit line contacts and methods for forming the same." This patent describes a vertical layer stack that includes a bit-line-level dielectric layer and an etch stop dielectric layer, which can be formed over an array region. The invention details the formation of bit-line trenches and the creation of bit-line-trench fill structures, which consist of a stack of a bit line and a capping dielectric strip. Additionally, he has developed a patent for a "Deposition apparatus including an off-axis lift-and-rotation unit and methods for operating the same." This invention features a deposition chamber with a vacuum enclosure and an electrostatic chuck, designed to improve the efficiency of the deposition process.
Career Highlights
Fujino is currently employed at SanDisk Technologies Inc., where he continues to push the boundaries of memory technology. His innovative approach and technical expertise have positioned him as a key player in the industry.
Collaborations
Throughout his career, Fujino has collaborated with talented individuals such as Yusuke Osawa and Syo Fukata. These partnerships have fostered a creative environment that has led to the development of cutting-edge technologies.
Conclusion
Shigehiro Fujino's contributions to memory device technology are noteworthy, and his patents reflect his commitment to innovation. His work continues to influence the field, paving the way for future advancements in memory systems.