Haiqiang Wang

Title: The Innovations of Haiqiang Wang

Introduction

Haiqiang Wang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology. With a total of 4 patents, his work focuses on advancements in LDMOS transistors.

Latest Patents

Haiqiang Wang's latest patents include innovative designs for LDMOS transistors. One of his patents describes a LDMOS transistor that features a semiconductor substrate with a first doping type. It includes a plurality of first trenches formed in the substrate, along with a wave-shaped drift region that enhances the conductive path. This design also incorporates a first shallow trench isolation (STI) structure in each trench, a body region with the first doping type, and a gate structure positioned over the body region and drift region. Additionally, a source region is formed in the body region, while a drain region is established in the drift region.

Another patent by Wang elaborates on the fabrication method of the LDMOS transistor, detailing similar structural components and their arrangement. This innovative approach aims to improve the efficiency and performance of semiconductor devices.

Career Highlights

Haiqiang Wang is currently employed at Semiconductor Manufacturing International Corporation in Shanghai. His role at the company allows him to apply his expertise in semiconductor technology and contribute to cutting-edge innovations in the industry.

Collaborations

Wang collaborates with notable colleagues, including Yong Cheng and Xianyong Pu. Their combined efforts in research and development have led to advancements in semiconductor technologies.

Conclusion

Haiqiang Wang's contributions to the field of semiconductor technology, particularly through his patents on LDMOS transistors, highlight his innovative spirit and dedication to advancing the industry. His work continues to influence the development of efficient semiconductor devices.