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For the Inventor, By the Inventor

Essex Junction, VT, United States of America

Hailing Wang

This inventor holds 7 USPTO granted patents. Top assignee: International Business Machines Corporation. Active years: 2013-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hailing Wang. Retrieved from https://idiyas.com/inventor/hailing-wang-916qh8hi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7

% Patents Active = 14.3

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 41(Granted Patents)


Company Filing History:

goldMedal7 out of 166,409 
 
International Business Machines Corporation
 patents

Years Active: 2013-2015

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7 patents (USPTO):Explore Patents
1. 9217769 - Ring oscillator testing with power sensing resistor (2015-12-22),
2. 9058441 - Methods for modeling of FinFET width quantization (2015-06-16),
3. 8806419 - Apparatus for modeling of FinFET width quantization (2014-08-12),
4. 8806415 - Integrated circuit pad modeling (2014-08-12),
5. 8799848 - Methods for modeling of FinFET width quantization (2014-08-05),
6. 8525549 - Physical unclonable function cell and array (2013-09-03),
7. 8514028 - Load tolerant voltage controlled oscillator (VCO), IC and CMOS IC including the VCO (2013-08-20),

Title: Hailing Wang: Innovator in Semiconductor Technology

Introduction

Hailing Wang is a prominent inventor based in Essex Junction, VT (US), known for his significant contributions to semiconductor technology. With a total of 7 patents to his name, Wang has made strides in the field, particularly in the modeling and testing of advanced electronic components.

Latest Patents

Wang's latest patents include innovative solutions such as a test circuit for a ring oscillator that incorporates a power sensing resistor. This circuit is designed to monitor the characteristics of the ring oscillator effectively. Another notable patent involves methods for modeling FinFET width quantization, which focuses on fitting a FinFET model to current/voltage characteristics and obtaining statistical data to enhance device performance.

Career Highlights

Hailing Wang is currently employed at International Business Machines Corporation (IBM), where he continues to push the boundaries of technology. His work has been instrumental in advancing the understanding and application of FinFET devices in modern electronics.

Collaborations

Wang collaborates with talented individuals such as Kai D Feng and Hanyi Ding, who contribute to his innovative projects and research endeavors.

Conclusion

Hailing Wang's contributions to semiconductor technology through his patents and work at IBM highlight his role as a leading inventor in the field. His innovative approaches continue to shape the future of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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