The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Jun. 27, 2014
International Business Machines Corporation, Armonk, NY (US);
Wilfried Ernest-August Haensch, Somers, NY (US);
Chung-Hsun Lin, White Plains, NY (US);
Philip J. Oldiges, Lagrangeville, NY (US);
Hailing Wang, Essex Junction, VT (US);
Richard Q. Williams, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for modeling FinFET width quantization is described. The method includes fitting a FinFET model of a FinFET device to single fin current/voltage characteristics. The FinFET device comprises a plurality of fins. The method includes obtaining statistical data of at least one sample FinFET device. The statistical data includes DIBL data and SS data. The method also includes fitting the FinFET model to a variation in a current to turn off the finFETs device (I) in the statistical data using the DIBL data and the SS data and determining a model for a voltage to turn off the finFETs device (V). The method also includes fitting the FinFET model to the V.