The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 03, 2013

Filed:

Feb. 23, 2012
Applicants:

Kai D. Feng, Hopewell Junction, NY (US);

Hailing Wang, Essex Junction, VT (US);

Ping-chuan Wang, Hopewell Junction, NY (US);

Zhijian Yang, Stormville, NY (US);

Inventors:

Kai D. Feng, Hopewell Junction, NY (US);

Hailing Wang, Essex Junction, VT (US);

Ping-Chuan Wang, Hopewell Junction, NY (US);

Zhijian Yang, Stormville, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/173 (2006.01);
U.S. Cl.
CPC ...
Abstract

A function cell comprising a first field effect transistor (FET) device, a second FET device, a first node connected to a gate terminal of the first FET device and a gate terminal of the second FET device, wherein the first node is operative to receive a voltage signal from an alternating current (AC) voltage source, an amplifier portion connected to the first FET device and the second FET device, the amplifier portion operative to receive a signal from the first FET device and the second FET device, a phase comparator portion having a first input terminal connected to an output terminal of the amplifier and a second input terminal operative to receive the voltage signal from the AC voltage source, the phase comparator portion operative to output a voltage indicative of a bit of a binary value.


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