Haikuan Kong

Title: The Innovative Contributions of Haikuan Kong in Crystal Growth Technology

Introduction

Haikuan Kong, an accomplished inventor based in Shanghai, China, has made significant advancements in the field of crystal growth technology. With a total of two patents to his name, Kong's inventions are paving the way for enhancing the efficiency and quality of silicon carbide crystals. His innovative approaches reflect a deep understanding of materials science and engineering.

Latest Patents

Among Haikuan Kong's notable patents is a **crucible for crystal growth** along with a **method for releasing thermal stress in silicon carbide crystals**. This invention introduces a unique crucible that maintains contact with the side surface of prepared crystals, featuring an annular non-closed splicing structure. This design prevents the crystals from being hooped during the growth process, effectively releasing thermal stress and minimizing fracturing rates. As a result, the overall yield of high-quality crystals is improved. Additionally, he has developed a **high-temperature test fixture**. This fixture incorporates at least three noble metal electrodes arranged in parallel to securely clamp test samples and facilitate the transmission of test signals to a device through connected noble metal wires, while also including a thermocouple for accurate temperature measurements.

Career Highlights

Haikuan Kong has worked with prominent companies and research institutions, including Anhui Weixin Changjiang Semiconductor Material Co., Ltd. and the R&D Center at the Shanghai Institute of Ceramics. His contributions in these professional environments have helped advance research and development initiatives within the field.

Collaborations

Throughout his career, Kong has collaborated with esteemed colleagues such as Yanqing Zheng and Erwei Shi. These professional partnerships have fostered a collaborative atmosphere that promotes innovation and knowledge sharing in crystal growth research.

Conclusion

Haikuan Kong's inventive contributions to the field of crystal growth technology exemplify his expertise and commitment to advancing materials science. His latest patents address critical challenges in silicon carbide crystal growth, making significant strides in the efficiency and reliability of manufacturing processes. As he continues his work, his impact on the industry will undoubtedly inspire future innovations.