The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Jan. 09, 2019
Anhui Weixin Changjiang Semiconductor Material Co., Ltd., Tongling, CN;
Pan Gao, Shanghai, CN;
Jun Xin, Shanghai, CN;
Haikuan Kong, Shanghai, CN;
Xuechao Liu, Shanghai, CN;
Yanqing Zheng, Shanghai, CN;
Erwei Shi, Shanghai, CN;
ANHUI WEIXIN CHANGJIANG SEMICONDUCTOR MATERIAL CO., LTD., Tongling, CN;
Abstract
The invention relates to a crucible for crystal growth and a method for releasing thermal stress of silicon carbide crystals. The crucible is a crucible in contact with the side surface of the prepared crystals, and the crucible has an annular non-closed splicing structure. The crucible for the crystal growth has the annular non-closed splicing structure, so that the crystals can be prevented from being hooped, hot stress concentrated in the crystals in the growth process of the crystals can be effectively released, the fracturing rate of the crystals can be reduced, and the finished product rate of the crystals can be increased.