Jun Xin

Title: Innovations of Jun Xin in Crystal Growth Technology

Introduction

Jun Xin is a notable inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor materials, particularly in the area of crystal growth. His innovative approach has led to the development of a unique crucible design that addresses critical challenges in the growth of silicon carbide crystals.

Latest Patents

Jun Xin holds a patent for a "Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal." This invention relates to a crucible that is in contact with the side surface of the prepared crystals. The crucible features an annular non-closed splicing structure, which effectively prevents the crystals from being hooped. This design allows for the effective release of thermal stress concentrated in the crystals during the growth process. As a result, the fracturing rate of the crystals is reduced, and the finished product rate is increased.

Career Highlights

Jun Xin is currently associated with Anhui Weixin Changjiang Semiconductor Material Co., Ltd. His work at this company has been pivotal in advancing semiconductor technology. His innovative designs and methods have garnered attention in the industry, showcasing his expertise in crystal growth.

Collaborations

Jun Xin has collaborated with notable colleagues, including Pan Gao and Haikuan Kong. Their combined efforts in research and development have contributed to the advancement of semiconductor materials and technologies.

Conclusion

Jun Xin's contributions to the field of crystal growth technology highlight his innovative spirit and dedication to advancing semiconductor materials. His patented crucible design represents a significant step forward in improving the quality and efficiency of silicon carbide crystal production.