Chinese Academy of Sciences

R&d Center, Shanghai Institute of Ceramics

Anhui Weixin Changjiang Semiconductor Material Co., Ltd.

R&d Center of Shanghai Institute of Ceramics

Haikuan Kong

Erwei Shi

Yanqing Zheng

Pan Gao

Jun Xin

Xuechao Liu

Xiaoniu Tu

The invention relates to a crucible for crystal growth and a method for releasing thermal stress of silicon carbide crystals. The crucible is a crucible in contact with the side surface of the prepared crystals, and the crucible has an annular non-closed splicing structure. The crucible for the crystal growth has the annular non-closed splicing structure, so that the crystals can be prevented from being hooped, hot stress concentrated in the crystals in the growth process of the crystals can be effectively released, the fracturing rate of the crystals can be reduced, and the finished product rate of the crystals can be increased.

Crucible for crystal growth as well as method for releasing thermal stress in silicon carbide crystal

A high temperature fixture, said fixture comprising: at least three noble metal electrodes arranged in parallel, among which two adjacent noble metal electrodes are used for clamping a test sample; noble metal wires connected to the noble metal electrodes at one end, and to a test device at the other end for transmitting test signals generated by the test sample to the test device through the noble metal electrodes; and a thermocouple for measuring the temperature of the test materials.

High-temperature test fixture

Growing community of inventors

Shanghai, China

Haikuan Kong