Location History:
- Freemont, CA (US) (1987 - 1989)
- Fremont, CA (US) (1986 - 2008)
Company Filing History:
Years Active: 1986-2008
Title: The Innovative Mind of Gust Perlegos
Introduction
Gust Perlegos is a notable inventor based in Fremont, California, recognized for his contributions to the field of non-volatile memory technology. With a total of six patents to his name, he has made significant advancements that enhance the performance and reliability of memory devices.
Latest Patents
One of his latest patents is the SONOS memory array with improved read disturb characteristics. This invention involves a PMOS non-volatile memory array utilizing SONOS transistors, which have program and erase threshold voltages optimized to improve read disturb characteristics. The threshold voltages are designed to be linearly convergent and separated by at least 0.5 volts, ensuring a charge retention time of at least 10 years. This design allows for a read voltage that remains stable without intersecting the threshold voltages. Another significant patent is the MOS floating gate memory cell containing a tunneling diffusion region. This invention describes a two-device floating gate MOS non-volatile memory cell, which includes a floating gate memory device coupled to a select device. The design features a thin tunnel dielectric region that facilitates the tunneling of carriers in and out of the floating gate, enhancing the functionality of the memory device.
Career Highlights
Throughout his career, Gust Perlegos has worked with several prominent companies, including Seeq Technology, Incorporated and Atmel Corporation. His experience in these organizations has contributed to his expertise in memory technology and innovation.
Collaborations
Gust has collaborated with notable professionals in the field, including Tsung-Ching Wu and William W. Ip. These collaborations have likely enriched his work and led to further advancements in memory technology.
Conclusion
Gust Perlegos is a distinguished inventor whose work in non-volatile memory technology has made a lasting impact. His innovative patents and career achievements reflect his dedication to advancing the field of memory devices.