Company Filing History:
3 out of 633 
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Years Active: 2016-2018
Title: Innovations of Gunuk Wang in Memory Device Technology
Introduction
Gunuk Wang is an accomplished inventor based in Houston, TX. He has made significant contributions to the field of memory device technology, holding a total of 3 patents. His work focuses on developing advanced memory devices that offer improved performance and efficiency.
Latest Patents
One of Gunuk Wang's latest patents involves a porous memory device that features a top and bottom electrode with a memory material layer, such as SiO, positioned between them. This memory material layer is designed to provide a nanoporous structure, which can be formed electrochemically through anodic etching. The electroformation of a filament through the memory material layer occurs internally, allowing for extremely low electro-forming voltages. This innovative porous memory device is capable of multi-bit storage, high on-off ratios, long high-temperature lifetime, excellent cycling endurance, fast switching, and lower power consumption. Another notable patent is for a nanoporous memory that includes a non-porous layer and a nanoporous layer sandwiched between the electrodes. This memory design eliminates the need for diodes, selectors, and transistors, which are typically required in other memory types to prevent crosstalk. The nanoporous material can be a metal oxide, metal chalcogenide, or a combination thereof, and it operates without requiring an electroformation process for switching between ON and OFF states.
Career Highlights
Gunuk Wang has worked at prestigious institutions such as William Marsh Rice University and Nanyang Technological University. His research and innovations have significantly impacted the development of memory technologies.
Collaborations
Gunuk Wang has collaborated with notable colleagues, including James Mitchell Tour and Yang Yang, further enhancing the scope and impact of his work in the field.
Conclusion
Gunuk Wang's contributions to memory device technology demonstrate his innovative spirit and commitment to advancing the field. His patents reflect a deep understanding of materials and engineering, paving the way for future advancements in memory technology.