The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2017
Filed:
Jul. 27, 2015
Applicants:
James M. Tour, Bellaire, TX (US);
Gunuk Wang, Houston, TX (US);
Yang Yang, Beijing, CN;
Inventors:
Assignee:
WILLIAM MARSH RICE UNIVERSITY, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/08 (2013.01); H01L 27/2472 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1633 (2013.01);
Abstract
A nanoporous (NP) memory may include a non-porous layer and a nanoporous layer sandwiched between the bottom and top electrodes. The memory may be free of diodes, selectors, and/or transistors that may be necessary in other memories to mitigate crosstalk. The nanoporous material of the nanoporous layer may be a metal oxide, metal chalcogenide, or a combination thereof. Further, the memory may lack any additional components. Further, the memory may be free from requiring an electroformation process to allow switching between ON/OFF states.