The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 05, 2016
Filed:
Aug. 27, 2012
James M. Tour, Bellaire, TX (US);
Jun Yao, Allston, MA (US);
Jian Lin, Houston, TX (US);
Gunuk Wang, Houston, TX (US);
Krishna Palem, Houston, TX (US);
James M. Tour, Bellaire, TX (US);
Jun Yao, Allston, MA (US);
Jian Lin, Houston, TX (US);
Gunuk Wang, Houston, TX (US);
Krishna Palem, Houston, TX (US);
WILLIAM MARSH RICE UNIVERSITY, Houston, TX (US);
NANYANG TECHNOLOGICAL UNIVERSITY, Singapore, SG;
Abstract
Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiO, SiOH, SiON, SiONH, SiOC, SiOCH, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 and equal to or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.