This inventor holds 3 USPTO granted patents and 2 published patent applications and 3 EPO patents. Top assignees: Commissariat a L'energie Atomique Et Aux Energies Alternatives, Commissariat À L'énergie Atomique Et Aux Énergies, Soitec. Active years: 2023-2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:


Years Active: 2023-2026
Title: Innovations of Guillaume Berre in Semiconductor Layer Transfer
Introduction
Guillaume Berre is a notable inventor based in Grenoble, France. He has made significant contributions to the field of semiconductor technology, particularly in methods for transferring thin layers onto substrates. With a total of 3 patents, his work has implications for various applications in electronics and materials science.
Latest Patents
Guillaume Berre's latest patents include innovative methods that enhance the efficiency of semiconductor layer transfers. The first patent describes a method for transferring a thin layer onto a receiver substrate that includes cavities and a region devoid of cavities. This method involves putting the donor substrate and the bonding face of the receiver substrate in contact, producing an assembly wherein the cavities are buried, and separating the assembly by fracture along a weakening plane. The bonding face of the receiver substrate features a bonding surface that comes into contact with the donor substrate, which includes a region devoid of cavities and an intercavity space that occupies a significant portion of the bonding face.
The second patent outlines a method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity with implanted species. This method also involves forming an embrittlement plane in the donor substrate and creating a packaging in which the cavity is buried. The separation of the packaging results in the transfer of the semiconductor layer to the receiver substrate while sealing the cavity with the semiconductor layer.
Career Highlights
Guillaume Berre is affiliated with the Commissariat à l'Énergie Atomique et aux Énergies Alternatives, a prominent research institution in France. His work at this institution has allowed him to focus on cutting-edge research in semiconductor technologies, contributing to advancements in the field.
Collaborations
Throughout his career, Guillaume has collaborated with esteemed colleagues such as Frédéric Mazen and Thierry Salvetat. These collaborations have fostered a productive environment for innovation and research in semiconductor applications.
Conclusion
Guillaume Berre's contributions to semiconductor layer transfer methods demonstrate his expertise and commitment to advancing technology in this field. His innovative patents reflect a deep understanding of materials science and engineering principles.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile