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Years Active: 2010-2012
Title: Guglielmo Fortunato: Innovator in MOS Device Manufacturing
Introduction
Guglielmo Fortunato is a notable inventor based in Rome, Italy. He has made significant contributions to the field of semiconductor technology, particularly in the manufacturing of MOS devices. With a total of 3 patents to his name, Fortunato's work has had a lasting impact on the industry.
Latest Patents
Fortunato's latest patents include a process for manufacturing a large-scale integration MOS device and the corresponding MOS device. This innovative process involves forming a gate structure above a semiconductor layer, creating a first doped region within a surface portion of the semiconductor layer, and irradiating this region with electromagnetic radiation for annealing. Additionally, a dielectric mirror, potentially of the Bragg-reflector type, is formed above another surface portion of the semiconductor layer. This mirror reflects part of the electromagnetic radiation, thereby protecting the underlying regions from exposure.
Career Highlights
Throughout his career, Guglielmo Fortunato has worked with prominent companies such as STMicroelectronics S.r.l. and the National Research Council of Italy (Consiglio Nazionale Delle Ricerche). His experience in these organizations has allowed him to refine his expertise in semiconductor manufacturing processes.
Collaborations
Fortunato has collaborated with esteemed colleagues, including Luigi Mariucci and Massimo Cuscuna. These partnerships have contributed to the advancement of technology in the field of MOS devices.
Conclusion
Guglielmo Fortunato's innovative work in the manufacturing of MOS devices showcases his expertise and dedication to advancing semiconductor technology. His contributions continue to influence the industry and inspire future innovations.