Guangdong, China

Guannan Yang

This inventor holds 3 USPTO granted patents and 4 published patent applications. Top assignee: Guangdong University of Technology. Active years: 2021-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Guannan Yang. Retrieved from https://idiyas.com/inventor/guannan-yang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 100.0

Average Co-Inventor Count = 4.6

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Guangdong, CN (2021)
  • Guangzhou, CN (2023)

Company Filing History:


Years Active: 2021-2025

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3 patents (USPTO):Explore Patents

Title: Guannan Yang: Innovator in Nano Metal Technologies

Introduction

Guannan Yang is a prominent inventor based in Guangdong, China. He has made significant contributions to the field of nano metal technologies, holding a total of 3 patents. His work focuses on innovative methods for preparing nano metal pastes and interconnect structures for semiconductors.

Latest Patents

One of Guannan Yang's latest patents is titled "Nano metal paste, and preparation and application thereof." This patent describes a method for preparing a nano metal paste, which involves several steps. First, an organic metallic salt and an organic reducing agent are added into water or an organic solvent to obtain a first mixture. Next, the first mixture is reacted under heating to obtain a second mixture containing metal nanoparticles. Finally, the second mixture is concentrated to obtain a nano metal paste containing 20-95% by weight of the metal nanoparticles. This patent also provides a conductive paste and a conductive ink prepared by using the nano metal paste as filler.

Another significant patent is "Interconnect structure for semiconductor with ultra-fine pitch and forming method thereof." This application relates to semiconductor manufacturing, specifically focusing on an interconnect structure for semiconductors with an ultra-fine pitch. The forming method includes preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control the initial particle size of the copper nanoparticles. The process continues with depositing the copper nanoparticles on a substrate, invertedly placing a chip with copper pillars as I/O ports on the substrate, and subjecting the chip and the substrate to hot-pressing sintering to enable bonding.

Career Highlights

Guannan Yang is affiliated with the Guangdong University of Technology, where he continues to advance his research in nano technologies. His innovative approaches have garnered attention in the academic and industrial sectors, contributing to the development of new materials and methods in semiconductor manufacturing.

Collaborations

Guannan Yang collaborates with notable colleagues, including Yu Zhang and Chengqiang Cui. Their combined expertise enhances the research and development efforts in their respective fields.

Conclusion

Guannan Yang is a key figure in the realm of nano metal technologies, with a focus on innovative solutions for semiconductor applications. His contributions through patents and collaborations highlight the importance of research in advancing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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