The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2023

Filed:

Aug. 26, 2022
Applicant:

Guangdong University of Technology, Guangzhou, CN;

Inventors:

Yu Zhang, Guangzhou, CN;

Chengqiang Cui, Guangzhou, CN;

Peilin Liang, Guangzhou, CN;

Jin Tong, Guangzhou, CN;

Guannan Yang, Guangzhou, CN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 24/81 (2013.01); H01L 24/11 (2013.01); H01L 24/16 (2013.01); H01L 2224/11015 (2013.01); H01L 2224/1181 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/81007 (2013.01); H01L 2224/81055 (2013.01); H01L 2224/8184 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81207 (2013.01); H01L 2224/81224 (2013.01); H01L 2224/81911 (2013.01); H01L 2924/381 (2013.01); H01L 2924/3841 (2013.01);
Abstract

This application relates to semiconductor manufacturing, and more particularly to an interconnect structure for semiconductors with an ultra-fine pitch and a forming method thereof. The forming method includes: preparing copper nanoparticles using a vapor deposition device, where coupling parameters of the vapor deposition device are adjusted to control an initial particle size of the copper nanoparticles; depositing the copper nanoparticles on a substrate; invertedly placing a chip with copper pillars as I/O ports on the substrate; and subjecting the chip and the substrate to hot-pressing sintering to enable the bonding.


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