This inventor holds 1 USPTO granted patent. Top assignee: United Microelectronics Corp.. Active years: 2011.
Company Filing History:
Years Active: 2011
Title: The Innovations of Guang-Wei Ye
Introduction
Guang-Wei Ye is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on improving manufacturing methods for semiconductor devices.
Latest Patents
Guang-Wei Ye holds a patent for a semiconductor-device isolation structure. This patent describes a manufacturing method that involves providing a substrate with at least one shallow trench isolation structure. The process includes performing a salicide process that forms a recess on the surface of the shallow trench isolation structure. It also involves forming a cap film that covers the substrate and fills the recess, followed by an etching process to remove the cap film outside the recess. Finally, a contact etch stop layer is formed to cover the substrate and fill the recess. This innovative approach ensures that the contact etch stop layer does not have seams or voids due to the prior filling of the recess with the cap film.
Career Highlights
Guang-Wei Ye is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to develop and refine his innovative ideas in semiconductor manufacturing.
Collaborations
Guang-Wei Ye has collaborated with notable colleagues such as Shui-Yen Lu and Shin-Chi Chen. These collaborations have contributed to the advancement of semiconductor technologies and innovations.
Conclusion
Guang-Wei Ye's contributions to semiconductor-device isolation structures highlight his expertise and innovative spirit in the field. His patent reflects a significant advancement in manufacturing methods, showcasing his role as a key inventor in the semiconductor industry.