The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
May. 29, 2008
Shui-yen LU, Hsinchu County, TW;
Guang-wei YE, Tainan, TW;
Shin-chi Chen, Tainan County, TW;
Tsung-wen Chen, Taipei, TW;
Ching-fang Chu, Hsinchu County, TW;
Chi-horn Pai, Taipei, TW;
Chieh-te Chen, Kaohsiung, TW;
Shui-Yen Lu, Hsinchu County, TW;
Guang-Wei Ye, Tainan, TW;
Shin-Chi Chen, Tainan County, TW;
Tsung-Wen Chen, Taipei, TW;
Ching-Fang Chu, Hsinchu County, TW;
Chi-Horn Pai, Taipei, TW;
Chieh-Te Chen, Kaohsiung, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A manufacturing method for a semiconductor-device isolation structure comprises providing a substrate with at least one shallow trench isolation structure, performing a salicide process that forms a recess on the surface of the shallow trench isolation structure, forming a cap film covering the substrate and filling the recess, performing an etching process to remove the cap film outside the recess, and forming a contact etch stop layer covering the substrate and filling the recess. Due to the filling recess with the cap film first, the contact etch stop layer covering the substrate and filling the recess does not have seams or voids.