Company Filing History:
Years Active: 2015-2023
Title: Innovations of Guan-Kai Huang in High Electron Mobility Transistors
Introduction
Guan-Kai Huang is a distinguished inventor based in Tainan, Taiwan, with a commendable portfolio of six patents. His contributions primarily focus on advancements in the field of electronics, particularly in the development of high electron mobility transistors (HEMT). HEMTs are pivotal in enhancing the performance of electronic devices, making Huang a significant figure in modern technological innovations.
Latest Patents
Among his latest innovations, Huang developed a high electron mobility transistor (HEMT) along with its forming method. This invention features a sophisticated architecture, including a carrier transit layer on a substrate, which is essential for improved electronic conductivity. The HEMT design incorporates a carrier supply layer positioned atop the carrier transit layer, along with a main gate and a control gate located on the carrier supply layer. Notably, a fluoride ion doped region is implemented right below the main gate, ensuring efficient control over electron flow. Additionally, the layout includes source and drain electrodes situated at opposite sides of the gates, connected by a metal interconnect. This configuration optimizes the transistor's performance, making it vital for various high-frequency applications.
Career Highlights
Huang is currently associated with United Microelectronics Corporation, a reputable semiconductor foundry. His ongoing work at the company allows him to explore new horizons in semiconductor technology, directly influencing the future of high-performance electronics. His innovative mindset and dedication to research continue to drive advancements in the field.
Collaborations
Throughout his career, Huang has collaborated with notable colleagues such as Kuo-Hsing Lee and Sheng-Yuan Hsueh. These partnerships exemplify a collaborative spirit within the research community, fostering the development of cutting-edge technologies and enhancing the innovation ecosystem in Taiwan.
Conclusion
In conclusion, Guan-Kai Huang stands out as a leading inventor in the field of high electron mobility transistors. His contributions, backed by a strong patent portfolio and collaborative efforts, significantly impact the realm of electronic engineering. As technology continues to advance, Huang's innovative work will undoubtedly play a crucial role in shaping the future of high-performance electronics.