Gregg S Higashi

Title: The Innovations of Gregg S. Higashi

Introduction

Gregg S. Higashi is a notable inventor based in Basking Ridge, NJ (US). He has made significant contributions to the field of electronic devices, holding a total of 4 patents. His work has focused on improving the fabrication processes of electronic components, showcasing his expertise and innovative spirit.

Latest Patents

One of Higashi's latest patents involves the fabrication of electronic devices through electroless plating of copper. This method utilizes palladium silicide as a catalytic surface, allowing for selective metallization in integrated circuits. The process introduces copper plating only in regions where the silicide is present, resulting in superior filling of vias and windows with excellent conductivity. Another significant patent is related to the method of making a polysilicon emitter bipolar transistor. This inventive method includes opening an emitter window in a dielectric layer and depositing at least one atomic species onto the exposed surface. The novel deposition step can lead to significantly improved device characteristics, such as a doubling of h_FE compared to prior art PETs.

Career Highlights

Higashi has had a distinguished career, working with prominent companies such as AT&T Bell Laboratories and American Telephone & Telegraph Company. His experience in these organizations has allowed him to develop and refine his innovative techniques in electronic device fabrication.

Collaborations

Throughout his career, Higashi has collaborated with notable individuals, including John C. Bean and Robert Hull. These collaborations have contributed to the advancement of technology in the field of electronics.

Conclusion

Gregg S. Higashi's contributions to the field of electronic devices through his innovative patents and career achievements highlight his importance as an inventor. His work continues to influence the industry and pave the way for future advancements.