Gregg H Jessen

Title: Innovator Gregg H. Jessen: Pioneering Semiconductor Technology

Introduction

Gregg H. Jessen is a notable inventor based in Beavercreek, OH (US). He has made significant contributions to the field of semiconductor technology, holding a total of 5 patents. His work focuses on enhancing the performance and efficiency of semiconductor power transistors.

Latest Patents

One of his latest patents is titled "Self-aligned gate and drift design for high-critical field strength semiconductor power transistors with ion implantation." This patent presents methods for forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high electric field semiconductors. The process involves depositing a dielectric layer on a high electric field substrate, etching the dielectric layer to create a drift region, and depositing a refractory material on both the substrate and dielectric layer. The refractory material is then etched to establish a gate length. Implant ionization is applied to create high-conductivity and high-critical field strength sources with SAG and SAD features. The device undergoes annealing to activate the contact regions, ensuring optimal performance.

Career Highlights

Gregg H. Jessen works for the United States of America as represented by the Secretary of the Air Force. His innovative approaches have significantly advanced the capabilities of semiconductor devices, making them more efficient and reliable.

Collaborations

Some of his notable coworkers include Andrew J. Green and Kelson D. Chabak. Their collaborative efforts have contributed to the successful development of advanced semiconductor technologies.

Conclusion

Gregg H. Jessen's work in semiconductor technology exemplifies innovation and dedication to improving electronic devices. His patents reflect a commitment to advancing the field and enhancing the performance of power transistors.