The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 26, 2022
Filed:
May. 07, 2020
Government of the United States, As Represented BY the Secretary of the Air Force, Wright-Patterson AFB, OH (US);
Kelson D Chabak, Springboro, OH (US);
Andrew J Green, Beavercreek, OH (US);
Gregg H Jessen, Beavercreek, OH (US);
United States of America as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US);
Abstract
Methods of forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high Esemiconductors are presented. A dielectric layer is deposited on a high Esubstrate. The dielectric layer is etched to form a drift region. A refractory material is deposited on the substrate and dielectric layer. The refractory material is etched to form a gate length. Implant ionization is applied to form high-conductivity and high-critical field strength source with SAG and SAD features. The device is annealed to activate the contact regions. Alternately, a refractory material may be deposited on a high Esubstrate. The refractory material is etched to form a channel region. Implant ionization is applied to form high-conductivity and high Esource and drain contact regions with SAG and SAD features. The refractory material is selectively removed to form the gate length and drift regions. The device is annealed to activate the contact regions.