Beavercreek, OH, United States of America

Andrew J Green

This inventor holds 4 USPTO granted patents and 4 published patent applications. Top assignees: United States of America as Represented by the Secretary of the Air Force, Other. Active years: 1978-2023.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Andrew J Green. Retrieved from https://idiyas.com/inventor/andrew-j-green-7djlr8t0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 4 

% Patents Active = 100.0

Average Co-Inventor Count = 2.1

ph-index = 1

Forward Citations = 1(Granted Patents)


Location History:

  • Salem, NM (US) (1978)
  • Beavercreek, OH (US) (2021 - 2023)

Company Filing History:


Years Active: 1978-2023

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4 patents (USPTO):Explore Patents

Title: The Innovations of Andrew J Green

Introduction

Andrew J Green is a notable inventor based in Beavercreek, OH (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and efficiency of power transistors.

Latest Patents

One of Andrew J Green's latest patents is titled "Self-aligned gate and drift design for high-critical field strength semiconductor power transistors with ion implantation." This patent presents methods for forming a self-aligned gate (SAG) and self-aligned source (SAD) device for high electric field semiconductors. The process involves depositing a dielectric layer on a high electric field substrate, etching the dielectric layer to create a drift region, and depositing a refractory material on both the substrate and dielectric layer. The refractory material is then etched to establish a gate length. Implant ionization is applied to create high-conductivity and high-critical field strength sources with SAG and SAD features. The device undergoes annealing to activate the contact regions. An alternative method involves depositing a refractory material on a high electric field substrate, etching it to form a channel region, and applying implant ionization to create high-conductivity source and drain contact regions. The refractory material is selectively removed to define the gate length and drift regions, followed by annealing to activate the contact regions.

Career Highlights

Throughout his career, Andrew J Green has worked with various organizations, including the United States of America as represented by the Secretary of the Air Force. His expertise in semiconductor technology has made him a valuable asset in the field.

Collaborations

Andrew has collaborated with notable professionals such as Gregg H Jessen and Kelson D Chabak. Their combined efforts have contributed to advancements in semiconductor technology.

Conclusion

Andrew J Green's innovative work in semiconductor technology has led to significant advancements in the field. His patents reflect a commitment to improving the efficiency and performance of power transistors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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