The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2021
Filed:
Dec. 20, 2019
Applicant:
Government of the United States, As Represented BY the Secretary of the Air Force, Wright-Patterson AFB, OH (US);
Inventors:
Michael L. Schuette, Kettering, OH (US);
Gregg H. Jessen, Beavercreek, OH (US);
Kevin D. Leedy, Dayton, OH (US);
Robert C. Fitch, Jr., Xenia, OH (US);
Andrew J. Green, Beavercreek, OH (US);
Assignee:
United States of America as represented by the Secretary of the Air Force, Wright-Patterson AFB, OH (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 27/085 (2006.01); H01L 23/528 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/205 (2006.01); H01L 29/24 (2006.01); H01L 21/8252 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 21/8258 (2006.01); H01L 27/32 (2006.01); H01L 29/49 (2006.01); H01L 51/05 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1207 (2013.01); H01L 21/8252 (2013.01); H01L 21/8258 (2013.01); H01L 23/528 (2013.01); H01L 27/0605 (2013.01); H01L 27/085 (2013.01); H01L 27/1225 (2013.01); H01L 27/1251 (2013.01); H01L 27/1259 (2013.01); H01L 27/3248 (2013.01); H01L 29/0649 (2013.01); H01L 29/205 (2013.01); H01L 29/24 (2013.01); H01L 29/4908 (2013.01); H01L 29/66969 (2013.01); H01L 29/7787 (2013.01); H01L 29/7869 (2013.01); H01L 51/0508 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract
A monolithically integrated circuit comprising a semiconducting wafer, a metal oxide thin film semiconductor device disposed adjacent a first region of the semiconducting wafer, and a dissimilar semiconductor device disposed adjacent a second region of the semiconducting wafer and fabrication methods thereof.