Grant Kenji Larsen

Title: Grant Kenji Larsen: Innovator in Ion Beam Technology

Introduction

Grant Kenji Larsen is a notable inventor based in Gloucester, MA (US). He has made significant contributions to the field of semiconductor equipment, particularly in ion beam technology. With a total of 7 patents to his name, Larsen's work has advanced the precision and efficiency of ion beam implantation processes.

Latest Patents

One of Larsen's latest patents is a method of measuring ion beam angles. This innovative method determines beam twist and calibrates tilt angles of an ion beam implanter relative to a crystalline target. The process involves providing reference data that defines the relationship between beam tilt and twist angles, measuring channeling severity, and comparing determined points to reference data for accurate calibration. Another significant patent is for a surface structure and method of making an electrostatic wafer clamp. This surface structure enhances thermal transfer from a workpiece while minimizing particulate contamination. The design includes a flexible layer with a rippled coating that improves thermal efficiency in vacuum processing systems.

Career Highlights

Grant Kenji Larsen is currently employed at Varian Semiconductor Equipment Associates, Inc. His work at this company has positioned him as a key player in the development of advanced semiconductor manufacturing technologies. His innovative approaches have contributed to the company's reputation for excellence in the industry.

Collaborations

Larsen has collaborated with notable coworkers such as Ashwin Madhukar Purohit and Robert A Poitras. These collaborations have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Grant Kenji Larsen's contributions to ion beam technology and semiconductor equipment have made a lasting impact on the industry. His innovative patents and collaborative efforts continue to drive advancements in precision manufacturing processes.