Graham J Pryce

Title: Graham J Pryce: Innovator in Semiconductor Technology

Introduction

Graham J Pryce is a notable inventor based in Malvern, GB. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative methods for manufacturing materials that enhance the performance of electronic devices.

Latest Patents

One of his latest patents is related to the manufacture of cadmium mercury telluride on patterned silicon. This invention pertains to the growth of Cadmium Mercury Telluride (CMT) on silicon substrates that bear integrated circuitry. The method involves growing CMT in selected growth windows on the silicon substrate by first creating one or more buffer layers through Molecular Beam Epitaxy (MBE) and then growing the CMT using Metal-Organic Vapor Phase Epitaxy (MOVPE). The growth windows are defined by masking the areas outside of them. This innovative approach allows for crystalline growth within the windows while any growth outside is polycrystalline and can be removed through etching. This invention eliminates the need for hybridization by enabling the growth of CMT structures directly on integrated circuits.

Another significant patent is for a low resistance contact semiconductor diode. In this invention, the traditional layer of highly doped p-type material is replaced with a layer of doped n-type material, which has a doping concentration between 1×10 cm and less than 1×10 cm. A thin layer of doped p-type material is also included, facilitating low resistance contact, transparency to radiation produced by the device, and confinement with minimal loss of radiation generated by laser devices.

Career Highlights

Graham J Pryce has worked with prominent organizations, including the Secretary of State for Defence in Her Britannic Majesty's Government and Qinetiq Limited. His experience in these institutions has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Graham has collaborated with notable individuals such as Timothy Ashley and Mark A Crouch. These collaborations have likely enriched his work and led to advancements in his field.

Conclusion

Graham J Pryce is a distinguished inventor whose contributions to semiconductor technology have paved the way for advancements in electronic devices. His innovative patents reflect his commitment to enhancing the efficiency and performance of modern technology.