The Secretary of State for Defence in Her Britannic Majesty's Government

Qinetiq Limited

Graham J Pryce

Timothy Ashley

Neil Thomson Gordon

Jean Giess

Janet E Hails

Colin John Hollier

John W Cairns

Andrew Graham

Mark A Crouch

Louise Buckle

David J Hall

Andrew J Wright

Suhkdev S Gill

William H Gilbey

This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.

Manufacture of cadmium mercury telluride on patterned silicon

A semiconductor device wherein the layer of highly doped p-type material typically found in devices of the prior art is replaced with a layer of doped n-type material, having a doping concentration of between 1&times;10 cm and less than 1&times;10 cm , and a thin layer of doped p type material thus facilitating low resistance contact, transparency to radiation produced by the device and confinement with low loss of radiation produced by laser devices.

Low resistance contact semiconductor diode

Ohmic contact for p-type GaAs

Growing community of inventors

Malvern, United Kingdom

Graham J Pryce