The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 24, 2002
Filed:
Aug. 11, 2000
Applicant:
Inventors:
Timothy Ashley, Malvern, GB;
Graham J Pryce, Malvern, GB;
Assignee:
Qinetiq Limited, London, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 3/300 ; H01L 3/10304 ;
U.S. Cl.
CPC ...
H01L 3/300 ; H01L 3/10304 ;
Abstract
A semiconductor device wherein the layer of highly doped p-type material typically found in devices of the prior art is replaced with a layer of doped n-type material, having a doping concentration of between 1×10 cm and less than 1×10 cm , and a thin layer of doped p type material thus facilitating low resistance contact, transparency to radiation produced by the device and confinement with low loss of radiation produced by laser devices.