The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
Aug. 01, 2005
Louise Buckle, Malvern, GB;
John W Cairns, Malvern, GB;
Jean Giess, Malvern, GB;
Neil T Gordon, Malvern, GB;
Andrew Graham, Malvern, GB;
Janet E Hails, Malvern, GB;
David J Hall, Malvern, GB;
Colin J Hollier, Malvern, GB;
Graham J Pryce, Malvern, GB;
Andrew J Wright, Malvern, GB;
Louise Buckle, Malvern, GB;
John W Cairns, Malvern, GB;
Jean Giess, Malvern, GB;
Neil T Gordon, Malvern, GB;
Andrew Graham, Malvern, GB;
Janet E Hails, Malvern, GB;
David J Hall, Malvern, GB;
Colin J Hollier, Malvern, GB;
Graham J Pryce, Malvern, GB;
Andrew J Wright, Malvern, GB;
Qinetiq Limited, London, GB;
Abstract
This invention relates to the manufacture of Cadmium Mercury Telluride (CMT) on patterned silicon, especially to growth of CMT on silicon substrates bearing integrated circuitry. The method of the invention involves growing CMT in selected growth windows on the silicon substrate by first growing one or more buffer layers by MBE and then growing the CMT by MOVPE. The growth windows may be defined by masking the area outside of the growth windows. Growth within the growth windows is crystalline whereas any growth outside the growth windows is polycrystalline and can be removed by etching. The invention offers a method of growing CMT structures directly on integrated circuits removing the need for hybridisation.